석유, 석탄, 천연가스 등의 화석에너지 자원들은 고갈되고 있고, 시대가 지나면서 에너지 문제의 중요성은 더욱 증가되어 에너지 안보 문제가 심각하다. 우리나라는 2009년도 기준 에너지 해외 의존도가 약 96.2%로 세계 에너지 시장의 변화에 취약한 구조를 가지고 있다. 특히 중동 지역의 의존도가 2008년
► For example, the hetero-PBG structure film is opaque for forward propagation, whereas it is transparent for backward propagation at 500nm
► Phase retarder layer affects the non- reciprocal transmission property.
► As refractive index anisotropy(Δn) is
Increased, hetero-PBG film has the non-reciprocal transmission property.
But, Δn is reduced, the non-reciprocal transmi
2. Thermal Equilibrium
Fermi level for the first time (Figure 3(c)) of the dash-dot line) is drawn.
Semiconductor conduction band and valence band of the neutral zone draw. To display the semiconductor doping level of Fermi level for the proper placement of the band (as shown in Figure 3-a in the neutral zone - energy band diagram, the same must be present.
In depletion layer
1. What’s HEMT?
- High electron mobility with heterojunction structure
(Prevent Coulomb scattering with no doping materials)
- High thermal stability
- High Breakdown voltage
2. 2DEG
- Discontinuity through the conduction band of the two semiconductors determines a charge transfer,
creating a triangular potential.
3. Polarization
- AlGaN/GaN HEMTs tra
heterojunctions
Jpn J.Appl.phys. 19,p.L225(1980)
< Structural comparison between MOSFET and HEMT >
① 1977, “ 집적화가 성공의 지름길이며, 실패하더라도 큰 업적을 증명할 수 있다”라는 믿음으로 인해 연구가 GaAs FET과 GaAs IC에 한정되어있었다. GaAs 기사에 의하면, insulator로 쓰이는 낮은 온도 플라스마 산화막의 소개가
carriers.
A p–n heterojunction composed of ZnO nanowires and a p+ silicon chip was achieved without any adulteration.
I–V curve for the p–n heterojunction composed of ZnO nanowires and the p+ silicon chip.
Au did not have any affect on the I–V curve.
the turn-on voltage of the heterojunction is about 0.5 V and the reverse sayuration current is 0.01 mA.
3. Results and Discussion
3.1 Morphologies and structure(SEM)
Fig. 1 (a)shows SEM image of as-obtained ZnO nanowires of in the first step ranging from 80 to 400 nm in diameters and about 4 mm in length. Gold particles at the tips of the nanowires can be seen in Fig. 1(a). This indicates that the ZnO nanowire growth was governed by a VLS process. Fig. 1(a) shows ZnO nanowires obtained under th
Heterojunction구조가 필요하고, 이에 따라 Donor와 Acceptor의 miscibility가 좋아야 한다. 따라서 물질의 구성에 제약이 있다.
3) donor-acceptor interface에서 분리되지 않는 geminate polaron pair가 exciton 대신에 photoinduce되어 효율을 떨어뜨린다.
4) 흡광 가능한 파장 대역이 좁아서 효율이 좋지 못하다.
5) 열에 의해 de
Cu/In 비에 따른 CuInS2 박막의 특성에 관한 연구
A Study on Properties of Cu/In ratio on the CuInS2 thin film
Abstract
CuInS2 thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[℃].
And structural and electrical properties were measured in order to certify optimum conditi